מספר חלק RM6N800LD-T יצרן Rectron קטגוריות MOSFET RoHS טופס מידע RM6N800LD-T תיאור MOSFET D-PAK MOSFET
יצרן Rectron קטגוריות MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 98 W Qg - Gate Charge 24 nC Rds On - Drain-Source Resistance 900 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V