מספר חלק D3S099N65B-U יצרן D3 Semiconductor קטגוריות MOSFET RoHS טופס מידע D3S099N65B-U תיאור MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220
יצרן D3 Semiconductor קטגוריות MOSFET Channel Mode Enhancement Id - Continuous Drain Current 35.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 281 W Qg - Gate Charge 62.6 nC Rds On - Drain-Source Resistance 90 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.3 V