מספר חלק R6012JNXC7G יצרן ROHM Semiconductor קטגוריות MOSFET RoHS טופס מידע R6012JNXC7G תיאור MOSFET 600V N-CH 12A POWER MOSFET
יצרן ROHM Semiconductor קטגוריות MOSFET Channel Mode Enhancement Id - Continuous Drain Current 12 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 60 W Qg - Gate Charge 28 nC Rds On - Drain-Source Resistance 390 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V