Nexperia's new 40 V low RDS(on) MOSFET helps automotive and industrial applications achieve a higher power density
Leading SOA and avalanche features improve durability and reliability
Nijmegen, May 27, 2021: Nexperia, an expert in the field of basic semiconductor devices, today announced the launch of a new 0.55 m? RDS(on) 40 V power MOSFET. The device is packaged in the highly reliable LFPAK88 package and is suitable for automobiles ( BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are 40 V devices with the lowest RDS (on) value produced by Nexperia. More importantly, they provide a power density that is more than 50 times higher than that of traditional D2PAK devices. In addition, these new devices can also provide higher performance in an avalanche and linear modes, thereby improving durability and reliability.
Neil Massey, Product Marketing Manager, Nexperia commented: "The new 8 x 8 mm LFPAK88 MOSFET combines the latest high-performance super-junction silicon technology with the mature LFPAK copper clip technology, which is known for its outstanding electrical and thermal performance. . Low RDS(on) allows us to pack more chips into the package, thereby increasing power density and reducing device pin size."
The size of these new power MOSFETs is only 8 x 8 x 1.7 mm, with leading linear mode/safe operating area (SOA) characteristics, and can be switched safely and reliably under high current conditions. Under the working conditions of 1 ms and 20 VDS, the SOA is 35 A due to the combination of the chip and the package, while under the working conditions of 10 ms and 20 VDS, the package will play a leading role at this time, and the SOA is 17 A. These data are 1.5 to 2 times better than competing products. These devices also provide the best single-pulse avalanche rating (EAS) 2.3 J and super ID current rating of 500 A. Unlike other competing products, this value is a measured limit, not a theoretical one. limit.
With the advantages of Nexperia's 8 x 8 mm LFPAK88 MOSFET in terms of size and performance, designers can replace two parallel older devices with a new LFPAK88, simplifying manufacturing and improving reliability. The BUK7S0R5-40H device that meets the AEC-Q101 standard provides twice the reliability of the vehicle standard requirements and is suitable for braking, power steering, battery anti-reverse protection, e-fuse, DC-DC converter, and motor control applications. Industrial PSMNR55-40SSH MOSFET is suitable for battery isolation, current limiting, e-fuse, motor control, synchronous rectification, and load switching applications in power tools, appliances, fans, electric bicycles, scooters, and wheelchairs.
Nexperia, as an expert in the production of large quantities of basic semiconductor devices, its products is widely used in various electronic designs around the world. The company's rich product portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFET devices, gallium nitride field-effect transistors (GaN FETs), as well as analog ICs and logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia can deliver more than 90 billion products each year, and the products meet the stringent standards of the automotive industry. Its products have been widely recognized by the industry in terms of efficiency (such as process, size, power, and performance), and have advanced small-size packaging technology, which can effectively save power and space.
With decades of professional experience, Nexperia continues to provide high-quality companies around the world with efficient products and services and has more than 12,000 employees in Asia, Europe, and the United States. Nexperia is a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has a huge intellectual property portfolio, and has obtained IATF 16949, ISO 9001, ISO 14001, and OHSAS 18001 certification.